Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal-Organic Chemical Vapor Deposition
Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal-Organic Chemical Vapor Deposition
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金属有机化学气相沉积法生长的高铟含量 InGaN 外延层的铟掺入引起的形态演化和应变弛豫
DOI：
10.1021/acs.cgd.7b00365
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发表时间：
2017
影响因子：
3.8
通讯作者：
Du Guotong
中科院分区：
文献类型：
--
作者：
Liu Jianxun;Liang Hongwei;Xia Xiaochuan;Liu Yang;Liu Jun;Abbas Qasim;Shen Rensheng;Luo Yingmin;Zhang Yuantao;Du Guotong
研究了金属有机物化学气相沉积（MOCVD）生长的高In含量InGaN外延层中In掺杂引起的形貌演化和应变弛豫。随着生长温度从753 °C降低到627 °C，In掺入量从0.10增加到0.42，表面形貌从最初的丘状三维表面粗糙度演变为渐进的光滑度。综合考虑应变弛豫和In表面活性剂效应的岛比例自调节模型可以很好地解释这种形貌演化机制。此外，这种InGaN外延层的应变弛豫和微结构缺陷的X射线衍射倒易空间映射和横截面透射电子显微镜，分别进行了研究。研究发现，随着In含量的增加，随着表面粗糙化，沿着产生随机层错的塑性弛豫机制变得更为重要。研究结果有助于更好地理解MOCVD生长的高In含量InGaN外延层的微观本质和生长机制。
The indium (In) incorporation induced morphological evolution and strain relaxation of high In content InGaN epilayers grown by metal–organic chemical vapor deposition (MOCVD) were investigated. With the decrease of growth temperature from 753 to 627 °C, In incorporation increases from 0.10 to 0.42, and the surface morphology evolves from initially mound-like three-dimensional surface roughness to progressive smoothness. Such morphology evolution mechanism can be well accounted for by a self-regulating model of islands’ proportions considering both strain relaxation and In surfactant effect comprehensively. Additionally, the strain relaxation and microstructural defects of such InGaN epilayers were investigated by X-ray diffraction reciprocal space mapping and cross-sectional transmission electron microscopy, respectively. It is found that, with the increase of In content, plastic relaxation via generating random stacking faults along with the surface sawtooth roughening becomes a more important strain relaxation mechanism. The presented results contribute to better understanding of the microscopic nature and growth mechanisms of high In content InGaN epilayers grown by MOCVD.