Large Magnetoresistance in Magnetic Tunnel Junctions Using Co-Mn-Al Full Heusler Alloy
Large Magnetoresistance in Magnetic Tunnel Junctions Using Co-Mn-Al Full Heusler Alloy
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DOI：
10.1143/jjap.43.l984
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发表时间：
2004-07
影响因子：
1.5
通讯作者：
H. Kubota;J. Nakata;M. Oogane;Y. Ando;A. Sakuma;T. Miyazaki
中科院分区：
文献类型：
--
作者：
H. Kubota;J. Nakata;M. Oogane;Y. Ando;A. Sakuma;T. Miyazaki
利用特高压磁控溅射机制备了具有Cr/Co-Mn-Al/Al-O/Co-Fe/Ir-Mn堆积结构的磁隧道结。Co-Mn-Al薄膜表现为B2结构，Mn和Al位点之间存在部分无序。250℃退火前后，室温下的隧道磁阻比分别为27%和40%。这些数值比以前用半赫斯勒合金所得到的数值高得多。
Magnetic tunnel junctions with a stacking structure of Cr/Co-Mn-Al/Al-O/Co-Fe/Ir-Mn were fabricated using a UHV magnetron-sputtering machine. Co-Mn-Al films showed B2 structure, which involves partial disorder between Mn and Al sites. Tunnel magnetoresistance ratios at room temperature were 27% and 40% before and after annealing at 250°C, respectively. Those values are much higher than the ones obtained in previous experiments using half Heusler alloys.