Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric
Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric
复制标题
TiON/TaON多层复合栅介质的InGaAs金属氧化物半导体电容器的界面和电学特性
DOI：
10.1063/1.4916539
复制
发表时间：
2015
影响因子：
4
通讯作者：
Tang W. M.
中科院分区：
文献类型：
--
作者：
Wang L. S.;Xu J. P.;Liu L.;Lu H. H.;Lai P. T.;Tang W. M.
采用射频溅射法制备了ti基氮化氧(TiON)/ ta基氮化氧（TaON）多层复合栅极介质InGaAs金属氧化物半导体（MOS）电容器。研究并比较了两种结构的界面性能和电学性能。实验结果表明，前者比后者具有更低的界面态密度（中隙时为1.0 × 1012 cm−2 eV−1），更小的栅极漏电流（栅极电压为2 V时为9.5 × 10−5 A/cm2），更大的等效介电常数（19.8）和更高的电应力可靠性。其机制在于，在硫钝化的InGaAs表面沉积超薄TaON中间层，可以有效地减少缺陷态，从而解除TaON/InGaAs界面处的Femi能级，改善器件的电学性能。
InGaAs metal-oxide-semiconductor (MOS) capacitors with composite gate dielectric consisting of Ti-based oxynitride (TiON)/Ta-based oxynitride (TaON) multilayer are fabricated by RF sputtering. The interfacial and electrical properties of the TiON/TaON/InGaAs and TaON/TiON/InGaAs MOS structures are investigated and compared. Experimental results show that the former exhibits lower interface-state density (1.0 × 1012 cm−2 eV−1 at midgap), smaller gate leakage current (9.5 × 10−5 A/cm2 at a gate voltage of 2 V), larger equivalent dielectric constant (19.8), and higher reliability under electrical stress than the latter. The involved mechanism lies in the fact that the ultrathin TaON interlayer deposited on the sulfur-passivated InGaAs surface can effectively reduce the defective states and thus unpin the Femi level at the TaON/InGaAs interface, improving the electrical properties of the device.