Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers
Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers
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DOI：
10.1109/led.2011.2163181
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发表时间：
2011-10-01
影响因子：
4.9
通讯作者：
Shieh, Han-Ping D.
中科院分区：
文献类型：
--
作者：
Liu, Po-Tsun;Chou, Yi-Teh;Shieh, Han-Ping D.
提出了一种具有非晶氮化InGaZnO（IGZO）（a-IGZO：N）在IGZO沟道上的双层堆叠结构的薄膜晶体管（TFT），以增强器件稳定性。a-IGZO：N作为背沟道钝化（BCP），在原位氮掺入过程中，在光刻沉积的非晶IGZO（a-IGZO）膜之后依次形成。a-IGZO：N可以有效地防止a-IGZO通道暴露于大气并阻碍与环境氧物质的相互作用。此外，a-IGZO：N膜的光学能带隙由于氮的添加而降低。这使得具有a-IGZO：N BCP的a-IGZO TFT对紫外线辐射影响表现出高免疫力。
A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO: N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.