0.1-/spl mu/m InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD
0.1-/spl mu/m InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD
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0.1-/spl mu/m InAlAs/InGaAs HEMT，具有通过 MOCVD 生长的 InP 凹槽蚀刻停止层
DOI：
10.1109/iciprm.1995.522081
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Y. Ishii
中科院分区：
文献类型：
--
作者：
T. Enoki;H. Ito;K. Ikuta;Y. Ishii
已经开发出具有MOCVD生长的InP凹槽蚀刻停止层的高性能0.1-/spl mu/m栅极InAlAs/InGaAs HEMT，并且发现InP凹槽蚀刻停止层不会降低器件性能，并且确实提高了阈值电压的均匀性和器件结构的可设计性。 InP衬底上的InAlAs/InGaAs HEMT因此适用于未来通信系统的超高速数字IC。
High-performance 0.1-/spl mu/m-gate InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD have been developed, and it has been found that the InP-recess-etch stopper does not degrade device performance and does improve the uniformity of the threshold voltage and the designability of the device structure. InAlAs/InGaAs HEMTs on an InP substrate are thus applicable to ultra-high-speed digital ICs for future communication systems.