Highly Anisotropically Self-Assembled Structures of para-Sexiphenyl Grown by Hot-Wall Epitaxy

Highly Anisotropically Self-Assembled Structures of para-Sexiphenyl Grown by Hot-Wall Epitaxy
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DOI:
10.1002/(sici)1521-4095(200005)12:9
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发表时间:
2000-05
期刊:
影响因子:
29.4
通讯作者:
A. Andreev;G. Matt;C. Brabec;H. Sitter;D. Badt;H. Seyringer;N. S. Sariçiftçi
A. Andreev;G. Matt;C. Brabec;H. Sitter;D. Badt;H. Seyringer;N. S. Sariçiftçi
中科院分区:
材料科学1区
文献类型:
--
作者:
A. Andreev;G. Matt;C. Brabec;H. Sitter;D. Badt;H. Seyringer;N. S. Sariçiftçi

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