Introducing gallium in silicon and thin film polysilicon using self assembled monolayer doping
Introducing gallium in silicon and thin film polysilicon using self assembled monolayer doping
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利用自组装单层掺杂将镓引入硅和薄膜多晶硅中
DOI：
10.1016/j.matlet.2022.132839
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发表时间：
2022
影响因子：
3
通讯作者：
Santosh Kurinec
中科院分区：
文献类型：
--
作者：
Carolyn Spaulding;Alex Taylor;Scott Williams;Glenn Packard;Gabriel Curvacho;Santosh Kurinec
单层掺杂（MLD）是涉及在基底上形成自组装的含掺杂剂层的技术。随后通过退火将掺杂剂结合到衬底中，形成扩散区域。在MLD之后，用二氧化硅覆盖样品并进行快速热退火（RTA）。在这项工作中，镓掺杂使用MLD已被证明。合成了含镓化合物三（2，4戊二酮）镓（III），并显示其适用于单层掺杂硅衬底和沉积薄膜多晶硅。进行二次离子质谱（西姆斯）和扩展电阻探针（SRP）测量，以确定掺杂剂分布和掺杂剂电激活。这些结果表明，接收到的剂量为1.6* 1015 atoms/cm 2，并且镓掺杂剂在n型硅中产生0.2 μm结。对于多晶硅，整个0.4 μm的薄膜被均匀掺杂，浓度大于1019 atoms/cm 3。
Monolayer Doping (MLD) is a technique involving the formation of a self-assembled dopant-containing layer on the substrate. The dopant is subsequently incorporated into the substrate by annealing, forming a diffused region. Following MLD, samples were capped with silicon dioxide and rapid thermal annealed (RTA). In this work, gallium doping using MLD has been demonstrated. Gallium containing compound Tris (2,4 pentanedionato) gallium(III) was synthesized, and shown to be suitable for monolayer doping silicon substrates and deposited thin film polysilicon. Secondary ion mass spectroscopy (SIMS) and spreading resistance probe (SRP) measurements were performed to determine the dopant profiles and dopant electrical activation. These results showed that a dose of 1.6*1015atoms/cm2was received, and the gallium dopant produced a 0.2 µm junction inn-type silicon. For polysilicon, the entire 0.4 μm film was evenly doped, with a concentration greater than 1019atoms/cm3throughout.