Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
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DOI：
10.1063/1.2240736
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发表时间：
2006-07-24
影响因子：
4
通讯作者：
Kessels, W. M. M.
中科院分区：
文献类型：
--
作者：
Hoex, B.;Heil, S. B. S.;Kessels, W. M. M.
通过等离子体辅助原子层沉积制备的Al 2 O3薄膜实现了c-Si的良好表面钝化，在低电阻率的n型和p型c-Si上分别产生2和13 cm/s的有效表面复合速度。对于类似于30 nm厚的Al 2 O3膜获得的这些结果与采用如在记录效率c-Si太阳能电池中使用的热氧化物时的现有技术的结果相当。一个7 nm的薄Al 2 O3膜仍然产生有效的表面复合速度为5 cm/s的n型硅。
Excellent surface passivation of c-Si has been achieved by Al2O3 films prepared by plasma-assisted atomic layer deposition, yielding effective surface recombination velocities of 2 and 13 cm/s on low resistivity n- and p-type c-Si, respectively. These results obtained for similar to 30 nm thick Al2O3 films are comparable to state-of-the-art results when employing thermal oxide as used in record-efficiency c-Si solar cells. A 7 nm thin Al2O3 film still yields an effective surface recombination velocity of 5 cm/s on n-type silicon.