Preparation of Sn doped SiO2 thin films by magnetron sputtering deposition using metal and metal-oxide powder targets
Preparation of Sn doped SiO2 thin films by magnetron sputtering deposition using metal and metal-oxide powder targets
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DOI：
10.7567/1347-4065/aaea67
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发表时间：
2019-02-01
影响因子：
1.5
通讯作者：
Suda, Yoshiaki
中科院分区：
文献类型：
--
作者：
Kawasaki, Hiroharu;Ohshima, Tamiko;Suda, Yoshiaki
采用两种混合粉末靶溅射沉积法制备了用于光电器件的锡掺杂二氧化硅薄膜。其中一种是Sn和SiO2的金属混合粉末靶，另一种是SnO2和SiO2的金属氧化物粉末靶。实验结果表明，Sn掺杂SiO2薄膜可以通过使用两种粉末靶的方法制备。利用SnO2 + SiO2靶，通过调节SnO2和SiO2粉末靶混合物的比例，可以控制等离子体的电子密度、温度、发射种类和元素浓度比等性能。然而，难以控制使用Sn + SiO2靶制备的膜的处理等离子体和元素浓度比。(C)2018日本应用物理学会
Tin (Sn) doped silicon dioxide (SiO2) thin films, for use in optical electronic devices, were prepared by the sputtering deposition method using two kinds of mixed powder targets. One of them was a metal mixed powder target of Sn and SiO2, and the others was a metal-oxide powder target of SnO2 and SiO2. Experimental results suggest that Sn doped SiO2 thin films can be prepared by the method using both powder targets. The properties of processing plasma, such as electron density and temperature, emission species, and the elements concentration ratio of the prepared films can be controlled by the ratio of the SnO2 and SiO2 powder target mixture using a SnO2 + SiO2 target. However, it is hard to control the processing plasma and elements concentration ratio of the prepared films using a Sn + SiO2 target. (C) 2018 The Japan Society of Applied Physics