Solid-state lasers: The Airy beam laser
Solid-state lasers: The Airy beam laser
复制标题
DOI：
10.1038/nphoton.2011.289
复制
发表时间：
2011-12
期刊：
影响因子：
35
通讯作者：
R. Won
中科院分区：
文献类型：
--
作者：
R. Won
通过执行局部选择性区域生长来实施该方法。首先，他们用SiO2掩蔽钛涂层玻璃基板，然后通过传统的光刻和干法蚀刻工艺形成亚微米直径的孔。GaN在表面上的高温生长成功地产生了微米级无缺陷的金字塔。研究人员在金字塔阵列上沉积InGaN/GaN量子威尔斯，形成器件的有源区。然后，他们用薄的p型掺杂GaN层和氧化铟锡层处理器件，以形成顶部电极。大多数微发光二极管显示出电致发光，尽管它们的颜色和强度在整个晶片上有所不同。这些微发光二极管的结构质量是显而易见的高内部量子效率（52%）推导出的光致发光测量。
implemented this approach by performing local selective area growth. First, they masked the titanium-coated glass substrate with SiO2 and then formed submicrometrediameter apertures by conventional lithography and dry etching processes. The high-temperature growth of GaN on the surface successfully produced micrometrescale defect-free pyramids. The researchers deposited InGaN/GaN quantum wells on the pyramid array to form the active region of the device. They then processed the device with a thin p-type doped GaN layer and an indium tin oxide layer to form the top electrode. Most of the micro-LEDs exhibited electroluminescence, although their colour and intensity varied across the wafer. The structural quality of these micro-LEDs was evident from the high internal quantum efficiency (52%) deduced from photoluminescence measurements.