Characteristic Resistive Switching of Rare-Earth Oxyhydrides by Hydride Ion Insertion and Extraction
Characteristic Resistive Switching of Rare-Earth Oxyhydrides by Hydride Ion Insertion and Extraction
复制标题
通过氢阴离子插入和脱嵌实现稀土氢氧化物的特性电阻开关
DOI：
10.1021/acsami.2c03483
复制
发表时间：
2022
影响因子：
9.5
通讯作者：
and Hideo Hosono
中科院分区：
文献类型：
--
作者：
Tomoyuki Yamasaki;Ryosei Takaoka;Soshi Iimura;Junghwan Kim;Hidenori Hiramatsu;and Hideo Hosono
离子迁移引起的阻性开关在随机存取存储器(ReRAM)和神经形态晶体管等领域具有广阔的应用前景。氢化物离子(H-)在室温下能在几种化合物中快速扩散，并且可以有效地利用掺杂/脱掺杂来实现电子电导率的显著变化，因此是一种有趣的电阻开关器件的迁移离子。在这里，我们报道了稀土氧化物(REHxO(3-x)/2)由场插入/引出H-诱导的可逆电阻开关特性。电流-电压测量表明，薄膜的电阻开关响应、磁滞和开关电压随薄膜中H-/O2-比的变化而变化。我们制作了一种采用Ti/YH1.3O0.85/MoOx型结构的ReRAM器件，并证实了器件的双极型工作，在1000次循环中，其电阻开关比为1个数量级。YHxO(3-x)/2薄膜中H-/O2-的组成梯度，除了顶电极的吸氢能力外，对器件的有效运行是必不可少的。我们的研究结果表明，氢化物导电固体电解质适合于电阻开关器件的开发。
Resistive switching induced by ion migration is promising for applications such as random-access memory (ReRAM) and neuromorphic transistors. Hydride ions (H–) are an interesting candidate as the migration ion for resistive switching devices because they have fast diffusion in several compounds at room temperature and doping/dedoping can be used effectively to achieve significant changes in the electronic conductivity. Here, we report reversible resistive switching characteristics in rare-earth oxyhydrides (REHxO(3–x)/2) induced by field insertion/extraction of H–. The current–voltage measurements revealed that the resistive switching response, hysteresis, and switching voltage vary greatly with the H–/O2–ratio in the films. We fabricated a ReRAM device using Ti/YH1.3O0.85/MoOxstructure and confirmed the bipolar-type operation with the resistance switching ratio of 1 order of magnitude over 1000 cycles. The composition gradient of H–/O2–in YHxO(3–x)/2films, in addition to the hydrogen-absorbing ability of the top electrode, is essential for effective device operation. Our findings show that hydride-conducting solid-state electrolytes are suitable for resistive switching device development.