Synthesis and characterization of single-crystal indium nitride nanowires
Synthesis and characterization of single-crystal indium nitride nanowires
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DOI：
10.1557/jmr.2004.19.2.423
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发表时间：
2004-02
影响因子：
2.7
通讯作者：
T. Tang;Song Han;W. Jin;Xiaolei Liu;C. Li;Daihua Zhang;Chongwu Zhou;Bin Chen;Jie Han;M. Meyyapan
中科院分区：
文献类型：
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作者：
T. Tang;Song Han;W. Jin;Xiaolei Liu;C. Li;Daihua Zhang;Chongwu Zhou;Bin Chen;Jie Han;M. Meyyapan
InN纳米线的合成和使用各种技术的特点。采用双区化学气相沉积技术在不同温度下操作气相发生和纳米线生长，得到了高质量的单晶纳米线，生长速率高达4-10 μm/h。通过使用单分散的金簇作为催化剂实现了精确的直径控制。在室温下对InN纳米线进行了光致发光和拉曼光谱研究。已经制造了由单个纳米线组成的器件以探索其电子输运性质。电导的温度依赖性揭示热发射作为主要的传输机制。
InN nanowires were synthesized and characterized using a variety of techniques. A two-zone chemical vapor deposition technique was used to operate the vapor generation and the nanowire growth at differential temperatures, leading to high-quality single-crystalline nanowires and growth rates as high as 4–10 μm/h. Precise diameter control was achieved by using monodispersed gold clusters as the catalyst. Photoluminescence and Raman studies have been carried out for the InN nanowires at room temperature. Devices consisting of single nanowires have been fabricated to explore their electronic transport properties. The temperature dependence of the conductance revealed thermal emission as the dominating transport mechanism.