Influence of Ge atoms on mobility and junction properties of thin-film transistors fabricated on solid-phase crystallized poly-SiGe
Influence of Ge atoms on mobility and junction properties of thin-film transistors fabricated on solid-phase crystallized poly-SiGe
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DOI：
10.1063/1.2385086
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发表时间：
2006-11
影响因子：
4
通讯作者：
Minoru Mitsui;K. Arimoto;J. Yamanaka;K. Nakagawa;K. Sawano;Y. Shiraki
中科院分区：
文献类型：
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作者：
Minoru Mitsui;K. Arimoto;J. Yamanaka;K. Nakagawa;K. Sawano;Y. Shiraki
研究了由非晶Si 1 −xGex（x=0、0.3、0.5和0.7）薄膜固相晶化形成的多晶SiGe薄膜上制备的薄膜晶体管（TFT）的输运特性。薄膜晶体管的迁移率随着Ge浓度从0%增加到30%而增加，随着Ge浓度超过30%而降低，这与Ge浓度对晶粒尺寸的依赖性一致。薄膜晶体管p-n结电子空穴对的产生速率和有效寿命分别随Ge浓度的增加而单调增加和单调减小，表明p-n结中的晶界缺陷随Ge浓度的增加而增加。
The transport properties of thin-film transistors (TFTs) fabricated on polycrystalline-SiGe films, which were formed by solid-phase crystallization of amorphous-Si1−xGex (x=0, 0.3, 0.5, and 0.7) films, were studied. The mobility of TFTs increases as the Ge concentration increases from 0% to 30% and the mobility decreases as the Ge concentration exceeds 30%, which agrees with the Ge concentration dependence of the grain size. The generation rates and the effective lifetimes of electron-hole pairs at the p-n junctions of TFTs increase and decrease monotonically with increasing Ge concentration, respectively, which means that the grain boundary defects in p-n junctions increase with increasing Ge concentration.