Analysis of three dimentional interface cracking in electronic packages
Analysis of three dimentional interface cracking in electronic packages
复制标题
电子封装三维界面裂纹分析
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
H. F. Nied
中科院分区：
文献类型：
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作者：
A. Ayhan;H. F. Nied
提出了三维界面表面裂纹问题应力强度因子的计算方法。特别感兴趣的是分析界面分层观察电子封装受到热循环。采用有限元方法，建立了丰富的三维界面裂纹尖端单元，可直接计算沿裂纹前沿的应力强度因子。丰富的三维裂纹尖端单元包含了界面裂纹的渐近位移场和应变场。对于电子封装中硅和聚合物衬底材料之间的裂纹，I型和II型应力强度因子可以强耦合，因为这些材料产生相对较大的Dunders参数值。结果表明，对于一般三维界面裂纹问题，富集界面裂纹尖端单元法是一种非常有效的求得应力强度因子和应变能释放率的方法。本研究特别感兴趣的是硅与环氧树脂界面上半圆形和四分之一圆形表面裂纹的应力强度因子。富元素法对于获得自由表面附近已知应力奇点强度变化的小区域内的I、II和III型应力强度因子特别有效。
A technique for calculation of stress intensity factors for three-dimensional interface surface crack problems is presented. Of special interest, is the analysis of interface delamination observed in electronic packaging subjected to thermal cycling. Using a finite element approach, enriched 3-D interface crack tip elements are developed for direct computation of stress intensity factors along the crack front. The enriched 3-D crack tip elements contain the asymptotic displacement and strain fields for interface cracks. For cracks located between silicon and polymeric underfill materials in electronic packaging, the mode I and mode II stress intensity factors can be strongly coupled, since these materials yield relatively large values for Dunders' parameters. It is demonstrated that the enriched interface crack tip element approach is a very efficient technique for obtaining stress intensity factors and strain energy release rates for general three-dimensional interface crack problems. Of particular interest in this study are the stress intensity factors for semi-circular and quarter-circular surface cracks on the interface between silicon and epoxy. The enriched element approach is particularly effective for obtaining mode I, II and III stress intensity factors in the small zone near the free surface where the strength of the stress singularity is known to change.