Fabrication of a New Si Field Emitter Tip with Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Structure
Fabrication of a New Si Field Emitter Tip with Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Structure
复制标题
具有金属氧化物半导体场效应晶体管 (MOSFET) 结构的新型硅场发射器尖端的制造
DOI：
10.1143/jjap.35.6637
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发表时间：
1996
影响因子：
1.5
通讯作者：
Junji Itoh Junji Itoh
中科院分区：
文献类型：
--
作者：
T. Hirano;S. Kanemaru;Hisao Tanoue Hisao Tanoue;Junji Itoh Junji Itoh
制作了一种具有金属氧化物半导体场效应晶体管（MOSFET）结构的电流可控硅场发射尖。该器件具有简单的结构，其中在MOSFET的漏极区中制成锥形Si尖端。门执行两个角色;一个是传统的提取栅极，另一个是用于提供给尖端的漏极电流的控制栅极。制作过程非常简单。为了形成用于源极和漏极的n型区域，仅将包括自对准离子注入的两个步骤添加到常规硅尖制造工艺中。实验结果表明，MOSFET的漏极电流可以很好地控制和稳定发射电流。使用单个尖端获得了约0.8 µA的稳定发射。我们还讨论了一种双栅MOSFET，以进一步扩展所介绍的制造工艺。
A current-controllable silicon field emitter tip with a metal-oxide-semiconductor field-effect transistor (MOSFET) structure is fabricated. The device has a simple structure in which a conical Si tip is made in the drain region of a MOSFET. The gate performs two roles; one is that of a conventional extraction gate and the other is that of a control gate for the drain current supplied to the tip. The fabrication process is very simple. In order to form n-type regions for the source and drain, only two steps including a self-aligned ion implantation were added to the conventional silicon tip fabrication process. Experimental results showed that the emission current was well controlled and stabilized by the drain current of the MOSFET. Stable emission of about 0.8 µA was obtained with a single tip. We also discuss a dual-gate MOSFET for further extension of the fabrication process introduced.