High‐power, diffraction‐limited‐beam operation from phase‐locked diode‐laser arrays of closely spaced ‘‘leaky’’ waveguides (antiguides)
High‐power, diffraction‐limited‐beam operation from phase‐locked diode‐laser arrays of closely spaced ‘‘leaky’’ waveguides (antiguides)
复制标题
DOI：
10.1063/1.99885
复制
发表时间：
1988-08
影响因子：
4
通讯作者：
D. Botez;L. Mawst;P. Hayashida;G. Peterson;T. Roth
中科院分区：
文献类型：
--
作者：
D. Botez;L. Mawst;P. Hayashida;G. Peterson;T. Roth
提出了一种新型的锁相半导体激光器阵列：一种紧密分布的折射率凹陷(反导轨)阵列。该阵列是由金属有机化学气相沉积和液相外延在图案化衬底上制备的十元AlGaAs/GaAs器件。该反导阵的基模和最高阶模的辐射损失可以忽略不计：比单个反导阵的辐射损失小20-30倍。相邻阵列模式之间的模式增益差至少比均匀耦合的正折射率波导阵列的模式增益差大一个数量级。在近乎衍射极限(1.4°)的方向图上获得了200 mW的基阵模式运转。在近乎衍射受限的光束(1.2°)图样中，实现了110 mW/未镀膜小面的异相模运转。讨论了反导阵固有的阵模稳定性。
A novel type of phase‐locked diode‐laser array is demonstrated: an array of closely spaced index depressions (antiguides). The arrays are ten‐element AlGaAs/GaAs devices fabricated by metalorganic chemical vapor deposition and liquid phase epitaxy over a patterned substrate. The fundamental and highest‐order modes of the array of antiguides have negligible radiation loss: 20–30 times less than that for a single antiguide. The modal‐gain differentials between adjacent array modes are at least an order of magnitude larger than those for evanescently coupled arrays of positive‐index guides. Fundamental‐array‐mode operation in a virtually diffraction‐limited‐beam (1.4°) pattern is obtained to 200 mW. Out‐of‐phase‐mode operation in a virtually diffraction‐limited‐beam (1.2°) pattern is achieved to 110 mW/uncoated facet. The inherent array‐mode stability of antiguided arrays is discussed.