Correction: Structural, optical, magnetic and half-metallic studies of cobalt doped ZnS thin films deposited via chemical bath deposition

Correction: Structural, optical, magnetic and half-metallic studies of cobalt doped ZnS thin films deposited via chemical bath deposition
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DOI:
10.1039/c5tc90114f
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发表时间:
2015-07
影响因子:
6.4
通讯作者:
M. Akhtar;Y. Alghamdi;M. A. Malik;R. Khalil;S. Riaz;S. Naseem
M. Akhtar;Y. Alghamdi;M. A. Malik;R. Khalil;S. Riaz;S. Naseem
中科院分区:
材料科学2区
文献类型:
--
作者:
M. Akhtar;Y. Alghamdi;M. A. Malik;R. Khalil;S. Riaz;S. Naseem

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介绍了化学浴沉积法制备的掺钴硫化锌薄膜的结构、光学、磁性和半金属性质的实验和理论研究结果。观察到由于钴的掺入导致立方硫化锌晶格常数略有变化的相纯沉积。结果表明,由Scherrer方程计算得到的微晶尺寸平均值为12 nm。纳米晶的团聚导致在衬底表面形成平均直径为170 nm的球形团簇。在钴掺杂的硫化锌薄膜中观察到了随钴浓度变化的室温铁磁性。这一行为与基质半导体中掺杂诱导的磁性相对应,并与理论预测相一致,此外还观察到了半金属性质。禁带宽度随钴浓度的变化归因于钴掺杂后的结构改变和量子限制现象的发生。样品的光致发光发射特性表明,钴离子发光中心的形成导致了辐射复合过程。光致发光强度的增强表明,当掺杂浓度为12at%时,没有出现浓度猝灭效应。
The results of experimental and theoretical study on structural, optical, magnetic and half-metallic properties of cobalt doped ZnS thin films deposited via chemical bath deposition are presented. Phase pure deposition of cubic ZnS with a slight variation in the lattice constant due to the incorporation of cobalt into the ZnS lattice is observed. It is shown that the crystallite size calculated by the Scherrer equation has an average value of 12 nm. The agglomeration of nanocrystallites leads to the formation of spherical clusters having an average diameter of 170 nm on the substrate surface. Room temperature ferromagnetism in cobalt doped ZnS thin films depending on cobalt concentrations is observed. Such behavior corresponds to the dopant-induced magnetism in the host semiconductor and agrees well with the theoretical predictions in addition to the observation of half metallicity. The variation in the band gap as a function of cobalt concentration is attributed to the structural modification after cobalt doping and occurrence of the quantum confinement phenomenon. Photoluminescence emission characteristics of the samples show the formation of luminescence centers of cobalt ions causing the radiative recombination processes. The increased intensity of PL emissions indicated that the concentration quenching effect did not appear up to the doping concentration of 12 at%.