A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED
A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED
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DOI：
10.1109/led.2005.859674
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发表时间：
2005-12
影响因子：
4.9
通讯作者：
Jae-Hoon Lee;J. H. Kim;M. Han
中科院分区：
文献类型：
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作者：
Jae-Hoon Lee;J. H. Kim;M. Han
我们提出了一种用于采用电压编程的有源矩阵有机发光二极管（AMOLED）的新型氢化非晶硅薄膜晶体管（a-Si:H TFT）像素电路。所提出的a-Si:H TFT像素电路由5个开关TFT、1个驱动TFT和1个电容器组成，成功地最大限度地减少了由于a-Si:H TFT和OLED阈值电压下降而导致的OLED电流下降。我们基于偏置温度应力的实验结果表明，OLED 的输出电流在所提出的像素中降低了 7%，而在传统的 2-TFT 像素中降低了 28%。
We propose a new hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel circuit for an active matrix organic light-emitting diode (AMOLED) employing a voltage programming. The proposed a-Si:H TFT pixel circuit, which consists of five switching TFTs, one driving TFT, and one capacitor, successfully minimizes a decrease of OLED current caused by threshold voltage degradation of a-Si:H TFT and OLED. Our experimental results, based on the bias-temperature stress, exhibit that the output current for OLED is decreased by 7% in the proposed pixel, while it is decreased by 28% in the conventional 2-TFT pixel.