High-Performance Top-Gate and Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors Fabricated Using Continuous-Wave-Laser Lateral Crystallization on a Glass Substrate
High-Performance Top-Gate and Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors Fabricated Using Continuous-Wave-Laser Lateral Crystallization on a Glass Substrate
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采用连续波激光横向结晶在玻璃基板上制造的高性能顶栅和双栅低温多晶硅薄膜晶体管
DOI：
10.1149/06701.0079ecst
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
H. Ohsawa
中科院分区：
文献类型：
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作者：
A. Hara;T. Meguro;S. Sasaki;H. Ohsawa
高质量多晶硅（poly-Si）薄膜是一种提高低温（LT）多晶硅薄膜晶体管（TFT）性能的技术。我们已经开发出使用二极管泵浦固态激光器的连续波激光横向结晶（CLC），以提高多晶硅薄膜的结晶质量。在本文中，我们报告了两种提高 LT 多晶硅 TFT 性能的方法，这些方法基于 CLC 多晶硅薄膜，并在 550 °C 的温度下在玻璃基板上制造。第一种方法是结合 CLC 多晶硅薄膜和溅射 HfO2 作为栅极电介质。另一种方法是结合CLC多晶硅薄膜和双栅结构来实现四端LT多晶硅TFT。前者的导通电流增强，是具有二氧化硅栅极堆叠的器件的四倍。在后者中，确认了阈值电压的高可控性。
A high-quality polycrystalline silicon (poly-Si) film is a technology for improving the performance of low-temperature (LT) poly-Si thin-film transistors (TFTs). We have already developed continuous-wave-laser lateral crystallization (CLC) using a diode-pumped solid-state laser to improve the crystalline quality of the thin poly-Si film. In this paper, we report on two approaches for improving the performance of LT poly-Si TFTs, which are based on a thin CLC poly-Si film and are fabricated at 550 ºC on a glass substrate. The first approach is a combination of a CLC poly-Si film and sputtered HfO2 as the gate dielectric. The other approach is a combination of a CLC poly-Si film and a double-gate structure for realizing four-terminal LT poly-Si TFTs. The former exhibited an enhancement in the on-current that was four times greater than a device with a silicon dioxide gate stack. In the latter, high controllability of the threshold voltage was confirmed.