Dependence of the Property of InGaN p-i-n Solar Cells on the Light Concentration and Temperature
Dependence of the Property of InGaN p-i-n Solar Cells on the Light Concentration and Temperature
复制标题
DOI：
10.1109/ted.2011.2166118
复制
发表时间：
2011-09
影响因子：
3.1
通讯作者：
X. Cai;S. Zeng;Xin Li;Jiangyong Zhang;Shuo Lin;Ankai Lin;Ming Chen;Wen-jie Liu;Shaobo Wu;Baoping Zhang
中科院分区：
文献类型：
--
作者：
X. Cai;S. Zeng;Xin Li;Jiangyong Zhang;Shuo Lin;Ankai Lin;Ming Chen;Wen-jie Liu;Shaobo Wu;Baoping Zhang
实验研究了光强和温度对InGaN p-i-n异质结太阳电池性能的影响。随着光浓度的增加，短路电流密度Jsc线性地增加，并且开路电压Voc线性地增加。而填充因子FF和相对效率η则先增大后减小。另一方面，太阳能电池的性能随着温度的升高而变差。讨论了与电池性能有关的重要参数的温度系数。随着温度的升高，由于带隙收缩，观察到峰值外量子效率的红移。此外，还研究了理想因子n和反向饱和电流密度Js，以揭示温度依赖性的内在机制和晶体质量的影响。本文给出了器件特性的变化趋势，为GaN基太阳电池的可靠性提供了有益的参考。
The effects of the light concentration and temperature on the performance of InGaN p-i-n homojunction solar cells were investigated experimentally. With the increase in the light concentration, the short-circuit current density Jsc increases linearly, and the open-circuit voltage Voc increases logarithmically. However, the fill factor FF and the relative efficiency η increase first and then decrease. On the other hand, the performance of the solar cell becomes worse with the increase in temperature. The temperature coefficients of important parameters related with the cell property were discussed. The red shift of the peak external quantum efficiencies was observed with increasing temperature due to the band-gap shrinkage. In addition, the ideality factor n and the reverse saturation current density Js were also investigated to reveal the intrinsic mechanism of temperature dependence and the effect of crystalline quality. This paper provides the variation trends of device characteristics, which are useful references concerning the reliability of GaN-based solar cells.