High-performance solution-processed triisopropylsilylethynyl pentacene transistors and inverters fabricated by using the selective self-organization technique
High-performance solution-processed triisopropylsilylethynyl pentacene transistors and inverters fabricated by using the selective self-organization technique
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DOI：
10.1063/1.2987419
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发表时间：
2008-09
影响因子：
4
通讯作者：
Se Hyun Kim;Danbi Choi;D. Chung;Chanwoo Yang;Jaeyoung Jang;Chan Eon Park;S. Park
中科院分区：
文献类型：
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作者：
Se Hyun Kim;Danbi Choi;D. Chung;Chanwoo Yang;Jaeyoung Jang;Chan Eon Park;S. Park
为了从溶液相三异丙基甲硅烷基乙炔基并五苯 (TIPS-PEN) 半导体中选择性地获得有机场效应晶体管 (OFET) 和反相器的自组织有源层，我们使用 O2 等离子体蚀刻对覆盖有疏水性含氟聚合物的氧化物电介质进行局部图案化。滴铸 TIPS-PEN 分子在 O2 等离子体蚀刻区域选择性结晶，产生亲水性氧化物表面。用六甲基二硅氮烷对图案化氧化物电介质进行改性，使 TIPS-PEN OFET 的场效应迁移率为 0.185 cm2 V−1 s−1，亚阈值摆幅为 0.738 V/decade，开/关比为 107。此外，由两个 OFET 组成的逆变器表现出良好的器件操作和 5.6 的逆变器增益。
To obtain selectively self-organized active layers of organic field-effect transistors (OFETs) and inverters from a solution-phased triisopropylsilylethynyl pentacene (TIPS-PEN) semiconductor, we locally patterned an oxide dielectric, covered with a hydrophobic fluoropolymer, using O2 plasma etching. Drop-cast TIPS-PEN molecules were selectively crystallized on the O2-plasma-etched area, where a hydrophilic oxide surface was produced. Modification of the patterned oxide dielectrics with hexamethyldisilazane led to a field-effect mobility of the TIPS-PEN OFETs of 0.185 cm2 V−1 s−1, a substhreshold swing of 0.738 V/decade and an on/off ratio of 107. Moreover, an inverter composed of two of these OFETs showed good device operation and inverter gain of 5.6.