Electric-field-induced charge injection or exhaustion in organic thin film transistor
Electric-field-induced charge injection or exhaustion in organic thin film transistor
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DOI：
10.1103/physrevb.71.035332
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发表时间：
2005-01-01
影响因子：
3.7
通讯作者：
Saiki, K
中科院分区：
文献类型：
--
作者：
Kiguchi, M;Nakayama, M;Saiki, K
有机半导体的电导率是在原位和连续测量的底部接触配置，在不同的栅极电压作为膜厚度的函数。耗尽层厚度可以直接确定为电流开始流动的阈值厚度的偏移。原位连续测量还可以定性地确定积累层厚度和注入载流子的分布函数。积累层厚度是几个单层，它不依赖于栅极电压。这取决于化学物质。
The conductivity of organic semiconductors is measured in situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as a shift of the threshold thickness at which electric current began to flow. The in situ and continuous measurement can also determine qualitatively the accumulation layer thickness together with the distribution function of injected carriers. The accumulation layer thickness is a few monolayers and it does not depend on gate voltages. Rather it depends on the chemical species.