Research on photoexcited-carrier dynamics in GaAs photoconductive switch at nJ excitation
Research on photoexcited-carrier dynamics in GaAs photoconductive switch at nJ excitation
复制标题
nJ激发下GaAs光电导开关光生载流子动力学研究
DOI：
10.1088/2058-6272/ac5af8
复制
发表时间：
2022-03
影响因子：
1.7
通讯作者：
刘骞
中科院分区：
文献类型：
--
作者：
徐鸣;王毅;刘春;司鑫阳;高荣荣;罗伟;屈光辉;贾婉丽;刘骞
研究了飞秒激光激发下GaAs光电导开关中光激发载流子的聚束输运特性。通过改变光激发能量，在单次激发和1 kHz频率下获得了具有高增益特性的连续输出。利用系综三谷蒙特卡罗模拟方法研究了光激发载流子的瞬态特性和动力学过程。结果表明，等离子体通道的存在是由于高密度电子-空穴对的聚束效应，这些电子-空穴对以高密度对流的形式输运。结果给出了瞬态开关过程中光激发载流子的演化过程。分析了光致热效应，揭示了重复频率下光激发的相对失效机理。
The bunching transport of photoexcited carriers in an GaAs photoconductive semiconductor switch (PCSS) with interdigitated electrodes is investigated under the femtosecond laser excitation. The continuous outputs featured with high-gain (HG) characteristic are obtained at single-shot and 1-kHz by varying the optical excitation energy. An ensemble three-valley Monte Carlo simulation is utilized to investigate the transient characteristics and the dynamic process of photoexcited carriers. It demonstrates that the presence of plasma channel can be attributed to the bunching of high-density electron-hole pairs, which transports in the form of the high-density filamentary current. Results provide the pictures of the evolution of photoexcited carriers during the transient switching. The photoinduced heat effect is analyzed that reveals the relative failure mechanism at optical excitation at repetition rates.