Time dependent density of free carriers generated by two photon absorption in silicon waveguides
Time dependent density of free carriers generated by two photon absorption in silicon waveguides
复制标题
DOI：
10.1063/1.2741611
复制
发表时间：
2007-05
影响因子：
4
通讯作者：
Y. Liu;H. Tsang
中科院分区：
文献类型：
--
作者：
Y. Liu;H. Tsang
在计算硅波导中两个光子吸收产生的自由载流子的时间相关密度时，考虑了载流子扩散和复合。将计算结果与自由载流子吸收引起的损耗的光泵浦探针测量的实验结果进行比较。提出了非线性有效长度的广义定义来描述非线性损耗的影响。作者通过实验证明，氦离子注入可以降低有效载流子寿命，并报告了在氦注入硅波导中观察到增强的自相位调制。
Carrier diffusion and recombination are considered in calculating the time dependent density of free carriers generated by two photon absorption in silicon waveguides. The calculations are compared to experimental results from optical pump-probe measurements of the induced loss from free carrier absorption. A generalized definition of nonlinear effective length is proposed to describe the effects of nonlinear loss. The authors experimentally demonstrate that helium-ion implantation can reduce the effective carrier lifetime and report on the observation of enhanced self-phase modulation in the helium implanted silicon waveguide.