Carrier Injection Induced Switching of Supper-lattice GeTe/Sb2Te3 Phase Change Memories
Carrier Injection Induced Switching of Supper-lattice GeTe/Sb2Te3 Phase Change Memories
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超晶格 GeTe/Sb2Te3 相变存储器的载流子注入感应开关
DOI：
10.7567/ssdm.2013.a-3-1
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
N. Takaura
中科院分区：
文献类型：
--
作者：
S. Kato;M. Araidai;K. Kamiya;Takahiro Yamamoto;K. Shiraishi;T. Ohyanagi;N. Takaura
从原子水平提出了一种新的超晶格GeTe/Sb 2 Te 3相变存储器（PCM）开关机制.通过向超晶格GeTe/Sb_2Te_3 PCRAM中注入载流子，可以控制高阻态（HRS）和低阻态（LRS）之间的相对能量稳定性，从而大大加速HRS和LRS之间的结构变化，并适用于高的编程/擦除（P/E）循环耐久性。
We propose a new on-off switching mechanism for super-lattice GeTe/Sb2Te3 phase change memories (PCM) from the atomistic level. Relative energy stability between high resistivity state (HRS) and low resistivity state (LRS) can be controlled by injecting carries into supper-lattice GeTe/ Sb2Te3 PCRAM, which drastically accelerates the structural change between HRS and LRS and is also suitable for high program/erase (P/E) cycles endurance.