Metal-Insulator Transition in the Quasi-One-Dimensional Transport of Fractional Quantum Hall States
Metal-Insulator Transition in the Quasi-One-Dimensional Transport of Fractional Quantum Hall States
复制标题
分数量子霍尔态准一维输运中的金属-绝缘体转变
DOI：
10.1088/0953-8984/27/20/202201
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
Nobuyuki Aoki and Yuichi Ochiai
中科院分区：
文献类型：
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作者：
Shaohua Xiang;Kazuhiro Fuji;Shun Sato;Shiran Xiao;Jonathan P. Bird;Nobuyuki Aoki and Yuichi Ochiai
我们研究了分数量子霍尔机制下量子点接触（QPC）中的边缘态传输，发现了类似于金属-绝缘体跃迁的行为。这种转变是由分数量子霍尔制度中微分电导的不寻常行为以及线性电导的温度依赖性中存在不动点和普遍标度所提出的。注意到0.7的功能不断演变成一个最后的分数高原在高磁场，我们认为，这个仍然悬而未决的功能本身可以被视为一个本地的，微观的，金属-绝缘体过渡的表现。
We investigate edge state transmission in quantum point contacts (QPCs) in the fractional quantum-Hall regime, finding behavior reminiscent of a metal–insulator transition. The transition is suggested by an unusual behavior of the differential conductance in the fractional-quantum-Hall regime, and by the presence of a fixed point and universal scaling in the temperature dependence of the linear conductance. Noting that the 0.7 feature evolves continuously into a last fractional plateau at high magnetic fields, we suggest that this still unresolved feature may itself be viewed as a manifestation of a local, microscopic, metal–insulator transition.