Broadband near-infrared emission in Tm3+-Dy3+ codoped amorphous chalcohalide films fabricated by pulsed laser deposition.
Broadband near-infrared emission in Tm3+-Dy3+ codoped amorphous chalcohalide films fabricated by pulsed laser deposition.
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DOI：
10.1364/oe.19.026529
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发表时间：
2011-12
期刊：
影响因子：
3.8
通讯作者：
Senlin Yang;Xuefeng Wang;Haitao Guo;G. Dong;B. Peng;J. Qiu;Rong Zhang;Yi Shi
中科院分区：
文献类型：
--
作者：
Senlin Yang;Xuefeng Wang;Haitao Guo;G. Dong;B. Peng;J. Qiu;Rong Zhang;Yi Shi
研究了脉冲激光沉积法制备的Tm（3+）-Dy（3+）共掺Ge-Ga基非晶硫卤薄膜的结构和近红外（NIR）发射特性。通过X射线衍射、X射线光电子能谱和拉曼光谱的测试，发现均匀的薄膜具有与玻璃靶相似的无规网络结构。在808 nm激光二极管泵浦下，产生了1050 ~ 1570 nm的超宽带近红外发射和1800 nm的强宽带近红外发射，这是由于Tm ~（3+）向Dy ~（3+）的有效能量转移。这一点进一步得到了厄巴赫光吸收边附近缺陷态宽范围激发测量的证实。结果揭示了潜在的高度集成的平面光学器件应用的共掺杂非晶硫卤薄膜。
Structural and near-infrared (NIR) emission properties were investigated in the Tm(3+)-Dy(3+) codoped Ge-Ga-based amorphous chalcohalide films fabricated by pulsed laser deposition. The homogeneous films illustrated similar random network to the glass target according to the measurements of X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. An 808 nm laser diode pumping generated a superbroadband NIR emission ranging from 1050 to 1570 nm and the other intense broadband NIR emission centered at ~1800 nm, which was attributed to the efficient energy transfer from Tm(3+) to Dy(3+) ions. This was further verified by the broad-range excitation measurements near the Urbach optical-absorption edge involved defect states. The results shed light on the potential highly integrated planar optical device applications of the codoped amorphous chalcohalide films.