Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer
Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer
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形成 AlN 缺陷层后，Si(111) 上 GaN 的质量显着提高
DOI：
10.1039/c4ce01164c
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发表时间：
2014-01-01
期刊：
影响因子：
3.1
通讯作者：
Liu, Xianglin
中科院分区：
文献类型：
--
作者：
Feng, Yuxia;Wei, Hongyuan;Liu, Xianglin
研究了金属-有机化学气相沉积(MOCVD)在不同AlN缓冲层厚度的Si(111)衬底上生长的GaN薄膜的应力状态和晶体质量。研究了不同厚度的AlN层的性能。观察到了氮化铝在硅表面粗糙的三维生长模式。在AlN/GaN界面形成了AlN颗粒混合取向的缺陷层。带有缺陷层的AlN缓冲层容纳了GaN薄膜和Si衬底之间的大部分晶格失配。获得了厚度为1m、几乎无裂纹、晶体质量较高的GaN薄膜，证明了缺陷层的重要性。
The stress state and crystal quality of a metal-organic chemical vapor deposition (MOCVD)-grown GaN film on a Si(111) substrate with different AlN buffer layer thicknesses were investigated. The properties of the AlN layers with varying thicknesses were studied. The three-dimensional growth mode with a rough surface of AlN on Si was observed. A defective layer with mixed orientations of AlN grains formed at the AlN/GaN interface. The AlN buffer layer with the defective layer accommodated most of the lattice mismatch between the GaN film and the Si substrate. The significance of the defective layer was proved by the obtainment of a 1 m thick nearly crack-free GaN film with high crystal quality.