One THz harmonic oscillation of resonant tunneling diodes
One THz harmonic oscillation of resonant tunneling diodes
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DOI：
10.1063/1.2139850
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发表时间：
2005-12-05
影响因子：
4
通讯作者：
Asada, M
中科院分区：
文献类型：
--
作者：
Orihashi, N;Suzuki, S;Asada, M
在与缝隙天线集成的亚太赫兹振荡 GaInAs/AlAs 谐振隧道二极管中观察到一次太赫兹谐波振荡。对于 50 μm 长的天线，基频和三次谐波频率分别为 342 GHz 和 1.02 THz。基波模式的最大输出功率约为23μW，三次谐波分量为基波的2.6%。用范德波尔方程进行理论分析定性地解释了测量结果。 (c) 2005 年美国物理研究所。
One THz harmonic oscillation was observed in a sub-THz oscillating GaInAs/AlAs resonant tunneling diode integrated with a slot antenna. The fundamental and third-harmonic frequencies were 342 GHz and 1.02 THz, respectively, for a 50 mu m long antenna. The maximum output power of the fundamental mode was around 23 mu W, and that of the third-harmonic component was 2.6% of the fundamental. Theoretical analysis with the van der Pole equation qualitatively explained the measured results. (c) 2005 Americian Institute of Physics.