All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals
All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals
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DOI：
10.1002/aelm.201400023
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发表时间：
2015-02
影响因子：
6.2
通讯作者：
P. Schlupp;F. Schein;H. von Wenckstern;M. Grundmann
中科院分区：
文献类型：
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作者：
P. Schlupp;F. Schein;H. von Wenckstern;M. Grundmann
DOI：10.1002/aelm.201400023半导体薄膜的室温（RT）制造具有几个显著的优点。其中之一是热不稳定但柔韧的基底的可用性以及制造过程中的低能耗。尽管它们的非晶结构，由具有电子构型（n − 1）d 10 n s 0（n > 3）的金属阳离子组成的氧化物显示出高的n型导电性和RT电子迁移率，约为10 cm 2 V −1 s −1。这是由于这些阳离子的导带最小值形成球形s -轨道，其对在非晶态中发生的键角的小偏差不敏感。[ 1 ]通常这些材料是镓、铟、锌和锡的复合氧化物。然而，除了这种n型非晶氧化物半导体（AOS）之外，还需要RT制造的p型半导体来创建双极器件。由锌和钴、铱或铑组成的尖晶石氧化物化合物是一些罕见的p型导电AOS。使用英国地质调查局发布的2012年金属风险清单及其价格，我们在这里讨论了用于双极二极管的相关AOS。此外，我们展示了RT制作的所有非晶氧化物pn异质结二极管组成的锌锡氧化物（ZTO）和锌钴氧化物（ZCO）。为了增强电流整流，在异质界面处引入半绝缘锌锡氧化物层。[二]《中国日报》
DOI: 10.1002/aelm.201400023 Room-temperature (RT) fabrication of semiconducting thin fi lms has several signifi cant advantages. Among those is the usability of thermally unstable but fl exible substrates as well as the low energy consumption during fabrication. Despite their amorphous structure oxides consisting of metal cations having the electronic confi guration ( n − 1)d 10 n s 0 ( n > 3) show a high n-type conductivity and RT electron mobility in the order of 10 cm 2 V −1 s −1 . This is due to the conduction band minimum forming spherical s -orbitals of these cations which are insensitive to small deviations in bonding angle that occur in the amorphous state. [ 1 ] Typically these materials are compound oxides of gallium, indium, zinc, and tin. However, besides such n-type amorphous oxide semiconductors (AOS) also RT fabricated p-type semiconductors are needed to create bipolar devices. Spinel oxide compounds consisting of zinc and cobalt, iridium, or rhodium are some of the rare p -conducting AOS. Using the Risk list 2012 for metals published by the British Geological Survey and their prices we discuss here relevant AOS for a utilization in bipolar diodes. Furthermore we demonstrate a RT fabricated all amorphous oxide pn -heterojunction diode consisting of zinc-tin-oxide (ZTO) and zinc-cobalt-oxide (ZCO). To enhance the current rectifi cation an ultrathin semi-insulating zinc-tin-oxide layer was introduced at the hetero interface. [ 2 ]