Defect formation upon reactive direct-current magnetron sputtering of GeO2 films
Defect formation upon reactive direct-current magnetron sputtering of GeO2 films
复制标题
反应直流磁控溅射GeO2薄膜缺陷形成
DOI：
10.1116/1.582114
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
M. Wuttig
中科院分区：
文献类型：
--
作者：
W. Njoroge;T. Lange;H. Weis;B. Kohnen;M. Wuttig
用X射线衍射仪、扫描电子显微镜、原子力显微镜和光学显微镜对反应直流磁控溅射GeO2薄膜的缺陷形成进行了研究。缺陷密度与氧气流量有明显的相关性。当流速高于约27.5sccm时，观察到较高的缺陷密度，此时观察到薄膜结构的转变。X射线衍射仪分析表明缺陷为Ge微晶。缺陷的形成与侵蚀区附近靶材上晶须状结构的形成和同一区域内的弧形结构密切相关。结合扫描电子显微镜成像和能谱分析，可以详细了解缺陷的形成。
Defect formation upon reactive direct-current magnetron sputtering of GeO2 films has been studied using x-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive x-ray (EDX) analysis, as well as atomic force microscopy and optical microscopy. The density of the defects shows a clear correlation with oxygen flow rate. High defect densities are observed for flow rates above approximately 27.5 sccm, where a transition of film structure is observed. XRD analysis identifies the defects as Ge crystallites. Defect formation is intimately related to the formation of whiskerlike structures on the target in the vicinity of the erosion zone and arcing in the same area. SEM imaging in conjunction with EDX allows a detailed understanding of defect formation.