Surface structures of MnAs grown on GaAs(111)B substrates
Surface structures of MnAs grown on GaAs(111)B substrates
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GaAs(111)B 衬底上生长的 MnAs 的表面结构
DOI:
10.1103/physrevb.68.115309
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发表时间:
2003
影响因子:
3.7
通讯作者:
Y. Garreau
中科院分区:
文献类型:
--
作者:
A. Ouerghi;M. Marangolo;M. Eddrief;S. Guyard;V. Etgens;Y. Garreau
Atomically flat MnAs epilayers grown on $\mathrm{GaAs}(111)B$ substrates by molecular-beam epitaxy present surface structures depending on the sample temperature and on the surface stoichiometry: the known $(2\ifmmode\times\else\texttimes\fi{}2)$ reconstruction and two new phases, i.e., a $(3\ifmmode\times\else\texttimes\fi{}1)$ reconstruction and a mixed phase of $(2\ifmmode\times\else\texttimes\fi{}2)$ and $(3\ifmmode\times\else\texttimes\fi{}1).$ By monitoring the reflection high-energy electron-diffraction diagram evolution as a function of the annealing temperature, it was possible to ascribe the $(3\ifmmode\times\else\texttimes\fi{}1)$ as being the As richest phase and the $(2\ifmmode\times\else\texttimes\fi{}2)$ as the As poorest phase. Two structural models for the observed reconstructions [i.e., $(3\ifmmode\times\else\texttimes\fi{}1)$ and $(2\ifmmode\times\else\texttimes\fi{}2)]$ are proposed.