Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current
Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current
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具有低栅极漏电流的增强型 InAlN/GaN MISHEMT
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
Baoshun Zhang
中科院分区：
文献类型：
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作者：
G. Gu;Cai Yong;Zhihong Feng;Liu Bo;Zeng Chunhong;Guohao Yu;Z. Dong;Baoshun Zhang
本文报道了一种采用栅下热氧化技术的低栅漏电流增强型InAlN/GaN MISHEMT。在VGS = 0 V和VDS = 5 V时，关断状态的源漏电流密度低至约10−7 A/mm。根据传输特性进行线性外推，测得阈值电压为+0.8 V。E模式器件在3.4 V栅极偏置下的峰值漏电流密度为179 mS/mm。在VGS = −15 V时测得的反向栅极漏电流密度为4.9 × 10−7 A/mm。
We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate. The off-state source-drain current density is as low as ~10−7 A/mm at VGS = 0 V and VDS = 5 V. The threshold voltage is measured to be +0.8 V by linear extrapolation from the transfer characteristics. The E-mode device exhibits a peak transconductance of 179 mS/mm at a gate bias of 3.4 V. A low reverse gate leakage current density of 4.9 × 10−7 A/mm is measured at VGS = −15 V.