Multiwavelength distributed Bragg reflector laser array fabricated using near field holographic printing with an electron‐beam generated phase grating mask
Multiwavelength distributed Bragg reflector laser array fabricated using near field holographic printing with an electron‐beam generated phase grating mask
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DOI：
10.1116/1.586656
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发表时间：
1993-11
影响因子：
1.4
通讯作者：
D. Tennant;T. Koch;J. Verdiell;K. Feder;R. Gnall;U. Koren;M. Young;B. Miller;M. Newkirk;B. Tell
中科院分区：
文献类型：
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作者：
D. Tennant;T. Koch;J. Verdiell;K. Feder;R. Gnall;U. Koren;M. Young;B. Miller;M. Newkirk;B. Tell
我们描述了近最佳近场全息光栅掩模图案的电子束光刻和分布式布拉格反射器（DBR）多波长激光器阵列制造使用近场印刷与此掩模。阵列中的光栅节距范围为242.861至243.750 nm，步长为0.127 nm。提供了有关螺距精度和螺距调整的数据。使用传统的UV光源而不是激光照明，大大简化了印刷过程，并消除了印刷光栅的相干伪影。化学蚀刻的InP测试光栅被证明是非常“干净”的外观和低的边缘粗糙度。使用所描述的掩模加工了设计为100 GHz频率间隔的DBR激光器阵列。测得的频率间隔为99 GHz，可以通过四段激光器设计的调谐段进一步调整。还描述了包含具有类似间距增量的16个波长的类似光栅掩模的表征。
We describe near optimum near field holography grating masks patterned by e‐beam lithography and a distributed Bragg reflector (DBR) multiwavelength laser array fabricated using near field printing with this mask. Grating pitches in the array ranged from 242.861 to 243.750 nm in 0.127 nm steps. Data on the pitch precision and pitch adjustment is presented. Use of a conventional UV source rather than laser illumination both greatly simplified the printing process and eliminated coherent artifacts from the printed gratings. Chemically etched InP test gratings are shown to be extremely ‘‘clean’’ in appearance and low in edge roughness. DBR laser arrays designed with 100 GHz frequency separation were processed using the mask described. The measured frequency separation was 99 GHz which could be further adjusted with a tuning section of the four‐section laser design. Characterization of a similar grating mask containing 16 wavelengths with similar pitch increments is also described.