Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si001 substrates by phosphorus-doping.
Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si001 substrates by phosphorus-doping.
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DOI：
10.1364/oe.20.022327
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发表时间：
2012-09
期刊：
影响因子：
3.8
通讯作者：
Zhi Liu;Weixuan Hu;S. Su;Chong Li;Chuanbo Li;C. Xue;Yaming Li;Y. Zuo;B. Cheng;Qiming Wang
中科院分区：
文献类型：
--
作者：
Zhi Liu;Weixuan Hu;S. Su;Chong Li;Chuanbo Li;C. Xue;Yaming Li;Y. Zuo;B. Cheng;Qiming Wang
采用超高真空化学气相沉积（UHV-CVD）技术在n（+）（-）Si（001）衬底上制备了20层非掺杂或原位掺磷GeSi岛结构的Ge/Si异质结发光二极管。在1.5 μm附近观察到增强的室温光致发光（PL）和电致发光（EL）。理论计算表明，这种发光是由GeSi岛中的辐射复合引起的。光致发光和电致发光强度的增强归因于有源层中足够的电子供应用于辐射复合。
Ge/Si heterojunction light emitting diodes with 20-bilayers undoped or phosphorus in situ doped GeSi islands were fabricated on n(+)(-)Si(001) substrates by ultrahigh vacuum chemical vapor deposition (UHV-CVD). Enhanced room temperature photoluminescence (PL) and electroluminescence (EL) around 1.5 μm were observed from the devices with phosphorus-doped GeSi islands. Theoretical calculations indicated that the emission is from the radiative recombination in GeSi islands. The intensity enhancement of PL and EL is attributed to the sufficient supply of electrons in active layer for radiative recombination.