Towards a CdS/Cu2ZnSnS4 solar cell efficiency improvement: A theoretical approach
Towards a CdS/Cu2ZnSnS4 solar cell efficiency improvement: A theoretical approach
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DOI：
10.1063/1.4903826
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发表时间：
2014-12-08
影响因子：
4
通讯作者：
Vigil-Galan, O.
中科院分区：
文献类型：
--
作者：
Courel, Maykel;Andrade-Arvizu, J. A.;Vigil-Galan, O.
在这项工作中，提出了一种具有认证世界纪录效率的 Cu2ZnSnS4 (CZTS) 太阳能电池的器件模型。对最重要的损耗机制及其对太阳能电池性能的影响进行了研究。陷阱辅助隧道效应和 CdS/CZTS 界面复合是最重要的损耗机制。模拟结果与测量的器件参数的详细比较表明，我们的模型能够重现正常工作条件下报告的实验观察结果（量子效率、效率、J(sc)、FF 和 V-oc）。最后，讨论了进一步提高太阳能电池效率的问题。 (C) 2014 AIP 出版有限责任公司。
In this work, a device model for Cu2ZnSnS4 (CZTS) solar cell with certified world record efficiency is presented. A study of the most important loss mechanisms and its effect on solar cell performance was carried out. The trap-assisted tunneling and CdS/CZTS interface recombination are introduced as the most important loss mechanisms. Detailed comparison of the simulation results to the measured device parameters shows that our model is able to reproduce the experimental observations (quantum efficiency, efficiency, J(sc), FF, and V-oc) reported under normal operating conditions. Finally, a discussion about a further solar cell efficiency improvement is addressed. (C) 2014 AIP Publishing LLC.