A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal-Oxide-Semiconductor Field-Effect Transistors and Fin-Type Metal-Oxide-Semiconductor Field-Effect Transistors
A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal-Oxide-Semiconductor Field-Effect Transistors and Fin-Type Metal-Oxide-Semiconductor Field-Effect Transistors
复制标题
溅射氮化钛栅体平面金属氧化物半导体场效应晶体管和鳍式金属氧化物半导体场效应晶体管电特性的氮气流量比依赖性的比较研究
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
他
中科院分区：
文献类型：
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作者：
Tetsuro Hayashida;Atsushi Ogura;他
