Deposition of BaHfO3 Dielectric Layers for Microelectronic Applications by Pulsed Liquid Injection MOCVD
Deposition of BaHfO3 Dielectric Layers for Microelectronic Applications by Pulsed Liquid Injection MOCVD
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DOI：
10.1002/cvde.200804272
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发表时间：
2009-09
影响因子：
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通讯作者：
G. Lupina;M. Lukosius;C. Wenger;P. Dudek;G. Kozlowski;H. Müssig;A. Abrutis;Raimondas Galvelis
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文献类型：
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作者：
G. Lupina;M. Lukosius;C. Wenger;P. Dudek;G. Kozlowski;H. Müssig;A. Abrutis;Raimondas Galvelis
This paper is concerned with the deposition and characterization of thin layers of BaHfO3in the view of storage capacitor applications in random access memories. Growth of pure BaHfO3was obtained at deposition temperatures of 600–700 °C using a combination of Ba(thd)2and Hf(thd)4precursors. The resulting layers crystallize in the cubic perovskite structure and exhibit a dielectric constant of ∼35.
