High-density one-dimensional well-aligned germanium quantum dots on a nanoridge array
High-density one-dimensional well-aligned germanium quantum dots on a nanoridge array
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DOI：
10.1063/1.2976549
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发表时间：
2008-08
影响因子：
4
通讯作者：
Yan-Ru Chen;C. Kuan;Y. Suen;Yuheng Peng;Peng Chen;C. Chao;Eih-Zhe Liang;Ching-Fuh Lin;H. Lo
中科院分区：
文献类型：
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作者：
Yan-Ru Chen;C. Kuan;Y. Suen;Yuheng Peng;Peng Chen;C. Chao;Eih-Zhe Liang;Ching-Fuh Lin;H. Lo
报道了在硅衬底上的纳米栅栏顶部选择性生长高密度的一维排列良好的Ge量子点。脊线阵列周期为150 nm，每个脊线宽度为80 nm，沟槽深度为20 nm。量子点的面密度约为5.4×10 9 cm−2。对化学势的模拟表明，适当的表面曲率分布可能会产生一个合适的化学势最小值，有助于定位量子点。这些脊还可以用来控制量子点的形状和均匀性。
The selective growth of high-density one-dimensional well-aligned Ge quantum dots (QDs) on the top of nanoridges patterned on Si substrate is reported. The period of ridge array is 150 nm, the width of each ridge is 80 nm, and the depth of the trench is 20 nm. The areal density of QDs is about 5.4×109 cm−2. Simulations of the chemical potential show that a proper distribution of the surface curvature may give rise to a suitable chemical potential minimum helping positioning the QDs. These ridges can also be used to control the shape and the uniformity of QDs.