Electroluminescence of silicon nanocrystals in MOS structures
Electroluminescence of silicon nanocrystals in MOS structures
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DOI：
10.1007/s003390101019
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
G. Franzò;A. Irrera;E. C. Moreira;M. Miritello;F. Iacona;D. Sanfilippo;G. Stefano;P. Fallica;F. Priolo
中科院分区：
文献类型：
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作者：
G. Franzò;A. Irrera;E. C. Moreira;M. Miritello;F. Iacona;D. Sanfilippo;G. Stefano;P. Fallica;F. Priolo
我们研究了MOS器件的结构、电学和光学性质，其中介质层由等离子体增强化学气相沉积沉积的亚化学计量比SiOx(x<；2)薄膜组成。沉积后，样品在高温(>；1000℃)下进行热处理，以诱导硅和二氧化硅相的分离，形成嵌入在绝缘基质中的硅纳米晶。我们在室温下观察到了一个很强的电致发光(EL)信号，峰值位于∼850 nm。电致发光的峰位置与同一器件的光致发光非常相似，表明所观察到的电致发光是由于硅纳米晶体中的电子-空穴复合而不是缺陷。文中还报道和讨论了SiO_2层中的Si浓度和热处理温度对这些器件的电学和光学性质的影响。结果表明，随着氧化层中硅含量的增加，器件的工作电压降低，总发射效率提高。报告了这些数据，并讨论了它们的影响。
We have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a substoichiometric SiOx(x<2) thin film deposited by plasma-enhanced chemical vapor deposition. After deposition the samples were annealed at high temperature (>1000 °C) to induce the separation of the Si and the SiO2phases with the formation of Si nanocrystals embedded in the insulating matrix. We observed at room temperature a quite intense electroluminescence (EL) signal with a peak at ∼850 nm. The EL peak position is very similar to that observed in photoluminescence in the very same device, demonstrating that the observed EL is due to electron–hole recombination in the Si nanocrystals and not to defects. The effects of the Si concentration in the SiOxlayer and of the annealing temperature on the electrical and optical properties of these devices are also reported and discussed. In particular, it is shown that by increasing the Si content in the SiOxlayer the operating voltage of the device decreases and the total efficiency of emission increases. These data are reported and their implications discussed.