Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide
Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide
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DOI：
10.1103/physrevapplied.9.034022
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发表时间：
2018-03-23
影响因子：
4.6
通讯作者：
Wrachtrup, Joerg
中科院分区：
文献类型：
--
作者：
Nagy, Roland;Widmann, Matthias;Wrachtrup, Joerg
尽管各种缺陷中心已经显示出作为量子传感器、单光子发射器或光-物质界面的前景，但寻找具有多功能能力的理想缺陷仍然是一个开放的过程。本着这种精神，我们研究了碳化硅中具有两条可分辨的零声子线的二色性硅空位，并分析了它们在光学发射和自旋控制方面的量子性质。我们证明，该中心将40%的光发射结合到零声子线中，显示出随温度和偏振的变化，光学性质的对比差异，自旋共振时的荧光强度增加了100%，其自旋-3/2基态的自旋相干时间长达0.6ms。这些结果挑出了这个缺陷中心，认为它是基于自旋的量子技术的一个有前途的系统。
Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3/2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.