Dynamic Analysis of a Physical SBT Memristor-Based Chaotic Circuit
Dynamic Analysis of a Physical SBT Memristor-Based Chaotic Circuit
复制标题
基于物理 SBT 忆阻器的混沌电路的动态分析
DOI：
10.1142/s0218127417300476
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发表时间：
2017-12-15
影响因子：
2.2
通讯作者：
Li, Yuxia
中科院分区：
文献类型：
--
作者：
Guo, Mei;Xue, Youbao;Li, Yuxia
提出了一种基于SBT忆阻器的混沌电路。通过理论分析和数值模拟，研究了SBT忆阻器初始状态和关键电路参数对电路动态行为的影响。结果表明，不同的初始状态和关键电路参数会对混沌电路的动力学行为产生显著影响，如稳定阱、周期循环、混沌，甚至一些复杂的瞬态动力学行为。这对基于物理SBT忆阻器的混沌电路的实现具有指导意义。
In this paper, a physical SBT memristor-based chaotic circuit is presented. The circuit dynamic behavior of dependence on the initial state of the SBT memristor and a key circuit parameter are investigated by theoretical analyses and numerical simulations. The results indicate that different initial states of the SBT memristor and the key circuit parameter can significantly impact the dynamic behavior of the chaotic circuit, such as stable sink, periodic cycle, chaos, and even some complex transient dynamics. It can guide future research on the realization of chaotic circuit based on physical SBT memristor.