Quantum confinement effect in ZnO thin films grown by pulsed laser deposition
Quantum confinement effect in ZnO thin films grown by pulsed laser deposition
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DOI：
10.1063/1.3010376
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发表时间：
2008-10
影响因子：
4
通讯作者：
J. Nie;Jiyong Yang;Yongri Piao;Hong-Guo Li;Yi Sun;Q. Xue;C. Xiong;R. Dou;Q. Tu
中科院分区：
文献类型：
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作者：
J. Nie;Jiyong Yang;Yongri Piao;Hong-Guo Li;Yi Sun;Q. Xue;C. Xiong;R. Dou;Q. Tu
采用脉冲激光沉积法在（0001）蓝宝石衬底上制备了高质量的ZnO纳米晶薄膜。薄膜进行了研究，通过X射线衍射，扫描电子显微镜，和光学吸收光谱。由吸收光谱得到的激子峰能量确定了带隙能量Eg，发现它随平均晶粒尺寸的减小而系统地增加，范围为3.388 ~ 3.647eV。这与量子限制模型是一致的，并且到目前为止，在ZnO薄膜中没有以令人信服的方式观察到。
High quality crystalline nanostructured ZnO thin films were fabricated by pulsed laser deposition on (0001) sapphire substrates. The films were investigated by x-ray diffraction, scanning electron microscopy, and optical absorption spectroscopy. The exciton peak energy from absorption spectra was used to determine the band gap energy Eg, which was found to increase systematically with the decrease in the mean grain size and ranged from 3.388to3.647eV. This is consistent with the quantum confinement model and, up until now, not observed in a convincing manner in the ZnO thin films.