Production behavior of irradiation defects in α-alumina and sapphire under ion beam irradiation
Production behavior of irradiation defects in α-alumina and sapphire under ion beam irradiation
复制标题
离子束辐照下α-氧化铝和蓝宝石辐照缺陷的产生行为
DOI:
10.1016/j.jnucmat.2003.12.010
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发表时间:
2004
影响因子:
3.1
通讯作者:
H. Moriyama
中科院分区:
文献类型:
--
作者:
K. Moritani;I. Takagi;H. Moriyama
The production behavior of irradiation defects in α-alumina and sapphire was studied by in situ luminescence measurement technique under ion beam irradiation of H+and He+. The luminescence intensity of the F+centers at 330 nm was observed to decrease monotonically with the increasing temperature up to 800 K, while the intensity of the F0centers at 410 nm to show non-monotonic temperature dependence. In the latter case, the intensity decreased with the temperature up to 600 K, and then increased above this temperature. It was also observed that the luminescence intensity at 410 nm was lower in the He+irradiation than in the H+irradiation. These observations were analyzed by considering the production mechanisms and reaction kinetics of the irradiation defects of F-type centers.