Biexciton binding energy in parabolic GaAs quantum dots
Biexciton binding energy in parabolic GaAs quantum dots
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DOI：
10.1103/physrevb.73.125321
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发表时间：
2006-03-01
影响因子：
3.7
通讯作者：
Ruda, H
中科院分区：
文献类型：
--
作者：
Ikezawa, M;Nair, SV;Ruda, H
从实验和理论上研究了限制在抛物量子点中的双激子。利用时间分辨的四波混频，在量子阱中形成的应变诱导GaAs量子点中观察到了双激子拍频。拍频的周期比来自同一阱中的量子阱区域的拍频的周期短约1.5倍。拍频周期的缩短是由于由应力源引起的横向限制而导致的量子点中的双激子结合能增加的直接证据。研究了双激子结合能的磁场依赖性，发现在8T以下几乎不依赖于外磁场。的双激子结合能的理论计算来解释所观察到的磁场依赖性。
Biexcitons confined in parabolic quantum dots are investigated both experimentally and theoretically. A biexcitonic beat is observed by using time-resolved four-wave mixing in strain-induced GaAs quantum dots formed in the quantum well. The period of the beat is about 1.5 times shorter than that from the quantum well region in the same well. The shortening of the beat period is direct evidence of an increase in the biexciton binding energy in the quantum dots due to the lateral confinement induced by the stressors. Magnetic field dependence of the biexciton binding energy is investigated, and is found to be almost independent of the external magnetic field up to 8 T. A theoretical calculation of the biexciton binding energy is presented to explain the observed magnetic field dependence.