Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode
Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode
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SiC 肖特基势垒二极管的紧凑建模及其对结势垒肖特基二极管的扩展
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
M. Hara
中科院分区：
文献类型：
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作者：
D. Navarro;F. A. Herrera;H. Zenitani;M. Miura;N. Yorino;H. Mattausch;M. Takusagawa;J. Kobayashi;M. Hara
建立了一个适用于肖特基势垒二极管（SBD）和结势垒肖特基二极管（JBS）结构的简化模型。SBD模型考虑了由于金属/半导体结中的电子发射引起的电流以及轻掺杂漂移层的电阻。扩展的SBD模型JBS是通过模拟的p+注入开发的漏电流最小化在反向偏置引起的分布电阻。仅需要p+注入的几何特征来模拟分布电阻。4 H-SiC SBD和JBS的电流-电压特性与开发的紧凑型模型的再现进行了验证，对二维（2D）器件的仿真结果，以及在不同温度下的测量。
A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current–voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures.