Defect annealing in Cu(In,Ga)Se2 heterojunction solar cells after high-energy electron irradiation
Defect annealing in Cu(In,Ga)Se2 heterojunction solar cells after high-energy electron irradiation
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Cu(In,Ga)Se2异质结太阳能电池高能电子辐照后的缺陷退火
DOI：
10.1063/1.1415345
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
U. Rau
中科院分区：
文献类型：
--
作者：
A. Jasenek;H. Schock;J. Werner;U. Rau
Cu(In,Ga)Se2/CdS/ZnO 太阳能电池需要至少 1018 cm−2 能量为 1 MeV 的电子，其功率转换效率会降低 25% 以上。即使在如此高的辐照剂量之后，在 130 至 160°C 之间的温度下对受辐照的太阳能电池进行退火也可以使器件性能完全恢复。等时退火实验表明，辐照引起的缺陷的退火活化能为1.05 eV。
Cu(In,Ga)Se2/CdS/ZnO solar cells need at least 1018 cm−2 electrons of an energy of 1 MeV to degrade in their power conversion efficiency by more than 25%. Even after such high irradiation doses, annealing of the irradiated solar cells at temperatures between 130 and 160 °C leads to a full recovery of the device performance. Isochronal annealing experiments unveil that the annealing of the irradiation-induced defects has an activation energy of 1.05 eV.