Gapped electronic structure of epitaxial stanene on InSb(111)
Gapped electronic structure of epitaxial stanene on InSb(111)
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DOI：
10.1103/physrevb.97.035122
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发表时间：
2017-11
影响因子：
3.7
通讯作者：
Caizhi Xu;Y. Chan;Peng Chen;Xiaoxiong Wang;David Flototto;J. Hlevyack;G. Bian;S. Mo;M. Chou;T. Chiang
中科院分区：
文献类型：
--
作者：
Caizhi Xu;Y. Chan;Peng Chen;Xiaoxiong Wang;David Flototto;J. Hlevyack;G. Bian;S. Mo;M. Chou;T. Chiang
Stanene是一种类似石墨烯的单锡原子层，是一种量子自旋霍尔绝缘体。它在带隙内的自旋极化边缘状态将非常适合自旋电子应用，但这种吸引人的性质尚未实现，因为在先前的实验中，支撑stanene的衬底会导致金属接触填充带隙并缩短量子自旋霍尔通道。通过明智地选择InSb（111）作为衬底，得到的系统显示出0.44 eV的大间隙，非常适合室温器件操作。因此，InSb（111）上的Stanene是下一代自旋电子技术的有力竞争者。
Stanene, a single tin atomic layer akin to graphene, is a quantum spin Hall insulator. Its spin-polarized edge states within the gap would be well suited for spintronic applications, but this attractive property has not been realized because the substrate for supporting stanene in prior experiments leads to a metallic contact that fills the band gap and shorts out the quantum spin Hall channels. By judiciously selecting InSb(111) as the substrate, the resulting system shows a large gap of 0.44 eV well suited for room-temperature device operations. Stanene on InSb(111) is thus a strong contender for next-generation spintronic technology.