Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors
复制标题
AlGaN/GaN 高电子迁移率晶体管中二维电子气肖特基势垒高度空间涨落引起的散射
DOI：
10.1063/1.4841715
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发表时间：
2013-12-02
影响因子：
4
通讯作者：
Wang, Zhan-Guo
中科院分区：
文献类型：
--
作者：
Li, Huijie;Liu, Guipeng;Wang, Zhan-Guo
提出了AlGaN/GaN异质结中二维电子气（2DEG）肖特基势垒高度（SBH）空间起伏的散射机制。我们发现低场迁移率在10（4）-10（6）cm（2）/Vs的数量级上。我们发现2DEG的输运性质同时受到由SBH涨落引起的迁移率和2DEG密度变化的影响。我们的研究结果表明，一个均匀的肖特基接触是非常需要的，以尽量减少SBH不均匀性对器件性能的影响。(C)2013 AIP Publishing LLC.
A scattering mechanism related to the Schottky barrier height (SBH) spatial fluctuation of the two dimensional electron gas (2DEG) in AlGaN/GaN heterostructures is presented. We find that the low field mobility is on the order of 10(4)-10(6) cm(2)/Vs. The 2DEG transport properties are found to be influenced by both the mobility and 2DEG density variations caused by the SBH fluctuation. Our results indicate that a uniform Schottky contact is highly desired to minimize the influence of SBH inhomogeneity on the device performance. (C) 2013 AIP Publishing LLC.