Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO
Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO
复制标题
DOI：
10.1103/physrevb.71.125210
复制
发表时间：
2005-03-01
影响因子：
3.7
通讯作者：
Watkins, GD
中科院分区：
文献类型：
--
作者：
Vlasenko, LS;Watkins, GD
经电子顺磁共振(ODEPR)光学检测的室温电子辐照氧化锌的光致发光(PL)中观察到的主要缺陷是带正电的氧空位(V-o(+))。它的光谱标记为L3，以前在4.2K的原位照射研究中观察到[Yu。题名/责任者：A.Rev.B 69,115212(2004年)]，但它被认为在室温下不稳定，没有被鉴定。在这里，它被发现稳定在400℃，在那里它消失了。观察到它与∼700 nm处的主要发光带竞争(负信号)，但在∼600 nm处的一个较弱的带中为正。给出了其在间隙中的电气水平位置的模型，以解释结果。还检测到另外两个ODEPR信号，其中一个初步被鉴定为也与氧空位有关。
The dominant defect observed, in the photoluminescence (PL) of room-temperature electron-irradiated ZnO by optical detection of electron paramagnetic resonance (ODEPR) is determined to be the positively charged oxygen vacancy (V-o(+)). Its spectrum, labeled L3, was previously observed in a 4.2 K in situ irradiation study [Yu. V. Gorelkinskii and G. D. Watkins, Phys. Rev. B 69, 115212 (2004)], but it was thought there not to be stable at room temperature and was not identified. Here it is found to be stable to 400 ° C, where it disappears. It is observed as a competing process (negative signal) to the dominant PL band produced by the irradiation at ∼ 700 nm, but is positive in a weaker band at ∼ 600 nm. Models are presented for its electrical level position in the gap to explain the results. Two other ODEPR signals are also detected, one of which is tentatively identified as also associated with the oxygen vacancy.